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Huge on-chip eDRAM L3. – 6x latency improvement. – No off-chip signaling rqmt. – 8x bandwidth improvement. – 3x less area than SRAM. – 5x less energy than. In a previous Power8 article, the performance and scaling benefits of IBM’s eDRAM capability were mentioned. One thing that should be stated. IBM Corp. took another step toward embedded DRAM and away from SRAM at ISSCC this week, pushing eDRAM as the technology to take over the SRAM.

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GlobalFoundries 14HP process, a marriage of two technologies – Page 4 – WikiChip Fuse

Labels were added by WikiChip. A poly strap i. On the FinFET, the strap is formed where the base of the fin lands at deep trench.

June 18, at Clearly, this is more efficient than having to go off-package but not as efficient as staying ecram. October 29, 2 Comments. You then remove the hardmask and a thin high-k dielectric like HfO 2 is deposited and grown in the trench. Memories play a big role. One thing that should be stated upfront is that Edfam and Power8 are targeting different parts of the market. Semiconductor devices face many hazards before and after manufacturing that can cause them to fail prematurely.

Knowledge Centers Entities, people and technologies explored Learn More. Because of the growing needs to keep the data closer and certainly as more pieces of the system continue to get incorporated onto the same die, there appears to be renewed interest in eDRAM.

Power is not a substantial player in the Network Management world, so I would not really expect engineers to tune the CPU for this type of workload. I would ibbm that engineers tuned Power for the Ihm market.

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With software multi-threaded heavy workloads, where the data in the cache will be accessed simultaneously by multiple cores and hardware strands, eDRAM may suffer in comparison to multi-ported SDRAM due to excessive inefficient re-loads from main memory and inefficient sharing. One thing that is immediately noticeable is that the eDRAM is sitting alone in its own chip. With multi-process heavy workloads, where data in the cache may not be simultaneously accessed from different cores or hardware strands, eDRAM may be a good fit.

David February 23, at 5: I wonder what the ratio of performance hit to reduction in latency was in moving to eDRAM?

eDRAM – Wikipedia

Help us fix it! Interest in the open-source ISA marks a significant shift among chipmakers, but it will require continued industry support to be successful. As shown, the memory is embedded into the Centaur chip, but jbm off-chip from the Power8. This decision cost the cache a few cycles of latency. This name imb be displayed publicly. The poly with all the other layers go up to and into the BOx but stay fully within the BOx.

Minimizing Chip Aging Effects Understanding aging factors within a design can help reduce the likelihood of product failures. Zen 2 will be manufactured on 7LP, I have a report on it here. Hybrid Memory Ed Sperling. The Deep trench extends through the top silicon, through the oxide layer and into the base substrate. There are also a lot of other factors that come into play when evaluating DRAM, such as performance and data retention, but this at least provides a quick high-level comparison.

Haswell package layout diagram [3], [4]. December 20, No Comment. The use of Static RAM has been traditionally beneficial to the chip manufacturers, since they could get fast and regular access to the memory cells, without having to wait for a slow refresh signal to propagate across the RAM.

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Network Management does require long term storage requirements of data, so this may be a very good back-end platform. The IBM die is mm2 with 4.

GlobalFoundries 14HP process, a marriage of two technologies

Managing tens of thousands of devices with hundreds of thousands of managed resources often requires thousands of threads in a single process with very regular minute polling intervals required tremendous throughput. December 25, 17 Comments. Figure 2 shows a layout diagram for the companion Centaur memory buffer chip. November evram, 1 Comment.

After that, the low-resistivity titanium nitride TiN conformal layer is added. Why Chips Die Semiconductor devices face many hazards before and after manufacturing that can cause them to fail prematurely. Fab Equipment Challenges For Logic is strong, memory is weak, and uncertainty in China could affect demand.

IBM Unveils World’s Fastest On-Chip Dynamic Memory Technology

More Than a Core Interest in the open-source ISA marks a significant shift among chipmakers, but it will require continued industry support to be successful. October 29, No Comment. Strange physics and future devices. Connection to Network Management Network Management traditionally deals with extremely highly threaded workloads.

Using a technique such as reactive-ion etching you form a deep trench.

This will go down as a good year for the semiconductor industry, where new markets and ihm were both necessary and rewarded. Below is a cross-sectional SEM shot of the entire stack from the 40x power rails at the very top to the deep trench capacitors under the devices.